Conference Program

We are facing higher switching frequency and higher operating temperatures. Wide Band Gap Semiconductors can accommodate these increasing demands by permitting better performance than today’s silicon. Passive components from heat sinks, capacitors and coils get smaller. The overall benefit is reduced sizes for the total systems in all applications. However, the challenges are having improved measurement equipment available and to analyze the designs correctly.

The Conference Programme will consist of 20-minute technical presentations covering:

  • GaN ICs, SiC Modules
  • Simulation and Measurement

In the afternoon, the Conference will be divided into two parallel Sessions:

  • SiC – Discrete, Passives and Measurement
  • GaN – Discrete, Passives and Measurement

GaN and SiC Modules, More Progress in Design

  • 08h50 - Introduction Bodo
  • 09h00 - Tackling the Challenges of Solar Inverters with SiC
  • 09h20 - Short Circuit Behavior of CoolSiC™ MOSFETs in Easy Modules
  • 09h40 - Benefits of SiC MOSFET Technology in Powertrain Inverter of a Formula E Racing Car
  • 10h00 - Gaining Speed: SiC Power Modules
  • 10h40 - DCM™ 1000X – Next Generation Power Module for SiC Drive Trains
  • 11h00 - Optimized Silicon Carbide Power Module Enables High Power Density DC/DC Converters
  • 11h20 - CoolGaN™ Powers the Industry to Higher Levels of Efficiency and Density with High Reliability
  • 11h40 - Why is the Ferrite Material Development for GaN so Difficult?


SiC – Discrete, Passives and Measurement

  • 13h00 - Precise Core Loss Measurement via Precision Power Analysis
  • 13h30 - Design Tips for SIC Devices for Using these Devices in New Designs
  • 14h00 - Accelerating Industrialization and Remaining Challenges for SiC Power Devices
  • 14h30 - SiC Enabling EV Applications
  • 15h30 - SiC MOSFETs -What it Takes to Create Cost-Effective and Highly Reliable High-Power Solutions
  • 16h00 - Software Configurable Cores – Building Blocks for Driving SiC MOSFETs
  • 16h30 - Simplify Your Driver - Benefit of Gate Driver
  • 17h00 - Gen 2 SiC MOSFETs Extends the Benefits of Silicon Carbide in Industrial Applications
  • 17h30 - TBA


GaN - Discrete, Passives and Measurement

  • 13h00 - Delivering Performance, Let’s Go GaNFast™
  • 13h30 - Small Changes, Global Impacts
  • 14h00 - Ecosystem to Lead the Future of GaN Power Converters
  • 14h30 - Getting from 48 Volts in Emerging Server and Automotive Applications
  • 15h30 - Solutions for Connectivity and Other Probing Challenges when Testing GaN
  • 16h00 - Effects on the Isolation Lifetime for Power Semiconductors driven with High Switching Speeds
  • 16h30 - Designing Switched-Mode Power Supplies in the High di/dt Era
  • 17h00 - Designing High Density Power Solutions with GaN
  • 17h30 - 100V GaN Technology: An Efficient Solution for Fast Switching Applications

Programme Details

GaN and SiC Modules, More Progress in Design

08h50 - 09h00
Introduction & Welcome
Speaker: Bodo Arlt, Bodo's Power

09h00 - 09h20
Tackling the Challenges of Solar Inverters with SiC
Speaker: Matthias Tauer, Vincotech
With the lowest levelized cost of energy (LCOE), solar is the cheapest power source in nearly 60 countries. Silicon carbide (SiC) helps decrease system costs, increase power density and boost efficiency, all of which can further reduce LCOE. This presentation looks at what a power module manufacturer can do in the way of topology, components and module technology to drive down LCOE.

09h20 - 09h40
Short Circuit Behavior of CoolSiC™ MOSFETs in Easy Modules

Speaker: André Lenze, Infineon Technologies AG
In modern power electronic systems, fast-switching semiconductors are required to reduce losses and to save filter size, weight and cost by using higher switching frequencies. Thus, an increasing number of customers are making use of silicon carbide (SiC) MOSFETs, in particular  in the device voltage class of 1200 V. The presentation focuses on the short-circuit behavior of CoolSiC™ MOSFETs in Infineon Easy modules. Measurements of short-circuit pulses show how different input parameters affect the low-inductive short-circuit events.

09h40 - 10h00
Benefits of SiC MOSFET Technology in Powertrain Inverter of a Formula E Racing Car

Speaker: Dr.-Ing. Felipe Filsecker, ROHM Semiconductor GmbH
With increasing performance requirements in the Formula E competition, powertrain inverters with standard Si-based IGBTs are not able to achieve desired specifications. SiC MOSFETs are a key technology for improving the powertrain inverter. Through the experience collected by Rohm as a technical partner of the Venturi Formula E team it is possible now to show a case study focusing on the advantages obtained by applying this technology in a racing car.

10h00 - 10h20
Gaining Speed: SiC Power Modules
Speaker: Eugen Wiesner, Mitsubishi Electric
Latest SiC technology achievements by Mitsubishi Electric will be reviewed with special focus on high voltage SiC-modules:
The performance of new 750A/3300V full SiC dual module in LV100-package will be explained based on real test data. The potential benefits of using this device (type name: FMF750DC-66A) in different applications will be discussed. The influence of temperature, gate resistance and gate voltage on switching performance will be investigated, specifically their impact on dv/dt and switching loss.
First test results with new 6,5kV full SiC dual module in HV100 package will be shown. In this device the antiparallel Schottky-Barrier diode is implemented directly into the SiC-MOSFET-chip. By this approach it was possible to reduce the active chip area in the module by 75% (!) resulting in the world's highest power density Full-SiC-Module representing 9,3kVA/cm³.

10h40 - 11h00
DCM™ 1000X – Next Generation Power Module for SiC Drive Trains

Speaker: Alexander Streibel, Danfoss Silicon Power GmbH
As a leader in advanced bonding and joining technologies Danfoss Silicon Power offers customized power modules utilizing WBG semiconductors. In 2017, a significant price drop for future SiC volumes have been predicted and SiC chip suppliers further raised major investments. In Bodo’s March Issue 2018, Danfoss introduced the next generation automotive power module DCM™ 1000 for traction inverters. In this speech, Danfoss provides valuable insights into this SiC-ready power module platform design.

11h00 - 11h20
Optimized Silicon Carbide Power Module Enables High Power Density DC/DC Converters
Speaker: Riccardo Ramin, SEMIKRON
In the past efficient DC/DC converters were mostly based on discrete TO packages. These limit the converter’s power rating as well as power density due to increased commutation inductances when paralleled. Non-isolated TO packages led to further challenges in cooling. Compact medium and high power designs were therefore difficult to realize.
Silicon Carbide and the latest packaging technologies open new ways for highly efficient high power DC/DC converters. The SEMIKRON approach features a low inductance industrial standard power module. Its well thought through pin-out it supports low inductance DC bus designs and enables 60kW output power at 50kHz.

11h20 - 11h40
CoolGaN™ powers the industry to higher levels of efficiency and density with high reliability

Speaker: Dr. Gerald Deboy, Infineon
Infineon’s CoolGaN™ Gallium Nitride devices are being produced in growing numbers for high volume applications.  Attend this talk and learn which are the initial applications/topologies for which CoolGaN™ devices are used and discover Infineon’s roadmap of expanding applications and products. Find how you can ensure GaN will work reliably in your designs.

11h40 - 12h00
Why is the Ferrite Material Development for GaN so Difficult?

Speaker: JC Sun, Bs&T Frankfurt am Main GmbH
High frequency magnetics (material, shaped core and assembley) are needed, The difficulties are of different dimensions: repetitive pulse excitation implicites flux transient change, and additionally the thermal equilibrium is hardly given with ever increasing switching frequency, like above MHz. A square wave loss tester (like BsT-SQ) can address this challenge. Material development is enhanced for resisitvity and permittivity at higher switching frequency.


SiC - Discrete, Passives and Measurement

13h00 - 13h30
Precise Core Loss Measurement via Precision Power Analysis

Speaker: Bernd Neuner, ZES Zimmer
With the advent of wide-bandgap semiconductors like SiC and GaN, reliable quantification of power losses in magnetic components becomes a limiting factor in power electronics design. Precise, trustworthy measurements with sufficient flexibility to handle various DUTs over a broadband frequency spectrum are raising the bar for data acquisition and processing.

13h30 - 14h00
Design Tips for SIC Devices for Using these Devices in New Designs
Speaker: Jeff Knapp, UnitedSiC
UnitedSiC Gen 3 FET offerings are now available in a wide range of package types, including TO247-3L, TO247-4L, TO220-3L, D2PAK-3L and D2PAK-7L. The devices are available in two classes of switching speed, the UJ3C and UF3C series. Design tips are discussed that can simplify the task of using these devices in new designs. The design trade-offs between low losses and good EMI are evaluated through the use of optimal snubbers. The use of a wide range of operating gate voltages is demonstrated. Armed with this data, users may use UnitedSiC FETs interchangeably with other SiC MOSFETs, Si MOSFETs or Si IGBTs by choosing drive conditions accordingly.

14h00 - 14h30
Accelerating Industrialization and Remaining Challenges for SiC Power Devices
Speaker: Thomas Neyer, ON Semiconductor
After several years of volume ramp for SiC Diodes the year 2018 is has marked the onset of the ramp for SiC MosFETs. Several remarkable projects have ramped up, mainly driven by industrial and automotive applications. While ON-Semi has launched several new SiC Diodes technologies between 2015 and 2018, ONs generation 1 SiC MosFET has been ramping up in a careful monitored sandbox since some time to ensure robustness and zero field failures. In this paper we are sharing the status and future technology plans.

14h30 - 15h00
SiC Enabling EV Applications
Speaker: Guy Moxey, Wolfspeed Power
Much is discussed and promised of SiC power devices for EV applications so Wolfspeed will present actual hardware solutions and results from their power products being adopted in the market today - in two essential, but different, automotive applications. Firstly wolfspeed will address medium voltage (6.5kV) and low voltage ( 1200V) device solutions for fast DC charging that target 90% battery charge within 5 mins and 20 mins respectively. Then moving onboard into the drivetrain system Wolfspeed will walk through a full turnkey 200kW 3 phase inverter drive showcasing the SiC hardware, optimized drive circuits, value proposition , system efficiency and thermal data – all highlighting the vehicle battery savings and range extension for EV in city and highway driving.

15h30 - 16h00
SiC MOSFETs -What it Takes to Create Cost-Effective and Highly Reliable High-Power Solutions
Speaker: Christophe Warin, Littelfuse
Which motivations for SiC devices and the SiC MOSFET are there? What’s the market status? How can a new High-volume 150 mm process help making SiC mainstream? Which role do performance/ruggedness validation, HTRB / HTGB, Avalanche and short circuit and switching performance play in this game? You will learn all of this with technical insights from one of the leaders in SiC technology.

16h00 - 16h30
Software Configurable Cores – Building Blocks for Driving SiC MOSFETs
Speaker: Cliff Robins; AgileSwitch
SiC MOSFETs are available in a wide array of package types with diverse switching characteristics and topology options. AgileSwitch’s latest product offering, a Software Configurable Gate Driver Core, was designed to make driving these devices more efficient and reliable. Rapid system development and optimization or patented Augmented Switching™ are achieved through an Intelligent Configuration Tool and Adapter Reference Designs.

16h30 - 17h00
Simplify Your Driver - Benefit of Gate Driver
Speaker: Wolfgang Rath, Tamura-Europe Limited
Tamura will introduce their latest gate driver solutions, which are most suitable for SiC power modules. Actually, the internal transformer has technology, which enables high-speed switching. Tamura has over 90 years of history as a transformer manufacturer for magnetic components.  Now, with the best gate driver solutions for SiC in your hands.

17h00 - 17h30
Gen 2 SiC MOSFETs Extends the Benefits of Silicon Carbide in Industrial Applications
Speaker: Vladimir Scarpa, ST Micro
Gen 2 SiC MOSFETs offer an optimized chip technology assembled in innovative packages. Together, they enable a very fast and safe switching. Short transition times of both voltage and current can be achieved without risk of parasitic turn-on nor overstress of the gate oxide.

17h30 - 18h00
TBA


GaN - Discrete, Passives and Measurement

13h00 - 13h30
Delivering Performance, Let’s Go GaNFast™
Speaker: Stephen Oliver, Navitas Semiconductor
GaNFast™ power ICs deliver high-frequency, high-efficiency switching in a reliable, easy-to-use “digital-in, power-out”, monolithically-integrated format. Demo boards and university projects are for the history books. Now is the time for mass production OEM designs that satisfy all criteria from efficiency and cool case temperatures, to conducted and radiated EMI compliance, with competitive systems costs. A case study of the world’s thinnest, mass production 45W USB-PD universal adapter will be presented.

13h30 - 14h00
Small Changes, Global Impacts
Speaker: Peter Di Maso, GaN Systems
The role of power greatly impacts company financial performance, business competitiveness and the health of our planet. GaN power transistors play a central role in the revolution of these power systems. This session reviews how GaN Systems addresses customer challenges, provides the right solutions and tools and delivers maximum benefit.

14h00 - 14h30
Ecosystem to Lead the Future of GaN Power Converters

Speaker: Stefano Gallinaro, Analog Devices
GaN mosfet based power converters show highest efficiency, power density and switching speed. The historical power switch centric view is evolving into a system solution approach, where a complete ecosystem of ICs is matched together and with the power switch to assure state of the art performances can be reached. Attendees will learn how next generation of Analog Devices digital isolated iCoupler® gate drivers, power supply controllers and sensing ICs create the best combo solution for either power modules integration or discrete designs.

14h30 - 15h00
Getting from 48 Volts in Emerging Server and Automotive Applications
Speaker: Dr. Edward A. Jones, EPC
Cloud servers, advanced gaming systems, artificial intelligence, cryptocurrency mining, and automotive electronics are all converging rapidly on 48 V as the new standard bus voltage.  48 V has the advantage of not requiring isolation and is therefore simpler, smaller, more efficient, and lower cost than other architectures.  GaN technology has demonstrated higher efficiency, and smaller size and is able to significantly reduce costs.  In this seminar we will show the various GaN applications and topologies used in these markets.

15h30 - 16h00
Solutions for Connectivity and Other Probing Challenges when Testing GaN
Speaker: Andrea Vinci, Tektronix
Gallium nitride-based transistors have superior characteristics and packaging is key to enable many new applications. High power density systems require super integrated packages, often as leadless SMD solutions, in order to enable low on resistance to be fully effective. PCB designers need to rethink their layout considering test best practices but often don’t. This poses practical challenges for probing the device in a mechanically robust and low impacting way from an electrical perspective. Learn from Tektronix how to face these challenges with their power fast-switching test bundle solution.

16h00 - 16h30
Effects on the Isolation Lifetime for Power Semiconductors driven with High Switching Speeds
Speaker: Markus Stöger, RECOM
The presentation will highlight some of the problems generated by high dv/dt and di/dt switching and suggest solutions. Switching behavior of transistors and the effects on the lifetime of organic and inorganic  isolation materials are taken in consideration. The effects of partial discharges in insulation will be discussed along with which parasitics need to be considered in the design of insulation materials. Results of an extended switching stress test performed by RECOM will be shown. The presentation is somewhat technical, but will be presented so that non-experts can also see that the use of Wide Band Gap Devices can cause new and unexpected problems if these are not addressed in the design process.

16h30 - 17h00
Designing Switched-Mode Power Supplies in the High di/dt Era
Speaker: Simon Muff, Keysight Technologies
Switched-mode power supplies move to faster switching speeds. Traditional workflows don’t work in this “high di/dt” era because they are non-sensitive to the spike voltages induced across layout parasitics. The new approach shown demonstrates how to incorporate post-layout analysis into one design environment and flow to overcome potential EMI effects.

17h00 - 17h30
Designing High Density Power Solutions with GaN
Speaker: Franz Xaver Arbinger, Texas Instruments
Stringent requirements on higher power density and efficiency for power electronics converters in applications such as server/telecom power systems and industrial motor drives necessitate transformative changes in power electronic architecture as well as replacement of Silicon based FETs with GaN. This presentation provides an insight into the latest GaN devices and explains how they are transforming the power industry.

17h30 - 18h00
100V GaN Technology: An Efficient Solution for Fast Switching Applications
Speaker: Michele Rossitto, Vishay Semiconductor GmbH
Power Packages Single and Dual, Symmetrical and Asymmetrical, Reverse Cooling. The new technology trend to minimize form factor and improve system efficiency. Integrated Buck synchronous rectification converters; solution for consumer, building automation, and industrial applications.