GaN ICs, SiC Modules, Simulation and Measurement
09h00 - 09h15
Introduction & Welcome
Speaker: Bodo Arlt, Bodo's Power
09h15 - 09h40
Thermal Management of GaN Power Semiconductors in SMD-Package
Speaker: Dr.-Ing. Marvin Tannhäuser, Siemens
Novel GaN power semiconductors with very high switching speed enables future power electronics with higher switching frequencies and higher integration. Therefore a low inductance design is often in conflict to the thermal requirements. The paper will show an application view for the thermal management of SMD devices regarding appropriate thermal equivalent circuit, top- vs. bottom-cooled devices and optimized layout concerning capacitive coupling and thermal conductivity in the PCB.
09h40 - 10h05
GaN Power ICs: Integration Drives Performance
Speaker: Steven Oliver, Navitas
Wide bandgap GaN has superb performance but early implementations (e.g. cascoded dMode or discrete eMode) need complex, expensive control and protection, which limited application advances and market adoption. Now, monolithic AllGaN™ integration of logic, drive and powertrain drives speed and efficiency in power conversion. With easy-to-use, high-speed, “digital-in, power-out” 650 V GaN Power ICs,designers can achieve 3x power density increases at the same or lower BOM costs than typical old and slow Si systems.
10h05 - 10h30
SiC Solution for Industrial Auxiliary Power Supply
Speaker: Christian Felgemacher, Rohm
Industrial power converter systems such as uninterruptible power supplies and motor drives need an auxiliary supply unit. This auxiliary supply unit provides the required power for a wide range of system components such as sensors, controllers, fans and gate drivers. Typically, flyback converters are used to derive this power from high voltage AC or DC inputs (e.g. 3~ 480VAC). If standard silicon devices are used as power switches in these converters the complexity of the circuits is either very high or have low efficiencies. These issues can be overcome using a high performance 1700V SiC MOSFET. In this presentation a simple and performant solution for an auxiliary supply solution based on a ROHM SiC MOSFET and a purpose built quasi-resonant control IC will be shown.
10h30 - 10h55
Fast switching and its challenges on Power Module Packaging and System Design
Stefan Häuser, Semikron
The integration of fast switching Wide Band Gap devices into power modules is a key to achieve higher system power ratings. The high switching speeds require optimisations within the power modules as well as on the system level. Semikron shows how industry standard power modules are upgraded to fully support the excellent features of Silicon Carbide. Further we present design recommendations for drivers and power stacks as well as best practice examples.
11h15 - 11h35
Make the most out of SiC!
Speaker: Alexander Streibel, Danfoss
Danfoss Silicon Power offers experience in customizing of power modules and excellent application know-how to cover SiC challenges. SiC is not predicted to replace pure silicon, but it is mainly requested if either inverter losses are very costly or if the package size is crucial within high power applications. In this speech, Danfoss shows up key issues in SiC power module design.
11h35 - 12h10
Measuring technique to characterize inductive components & magnetic cores
Speaker: JC Sun, Bs & T
Nonlinearity magnetization curve and hysterese loop Characterise inductive components Characterise cores according to IEC
SiC - Discrete, Passives and Measurement
13h15 - 13h40
A SiC MOSFET for mainstream adoption
Speaker: Fanny Björk, Infineon
Technical advantages of a SiC MOSFET lead to strong benefits in power conversion systems. Boosted efficiency factors enable size and system cost reductions and also open up for system improvements in robustness and reliability. To become a mainstream product the SiC MOSFET´s outstanding functionality must come together with right cost position, system compatibility, IGBT-like FIT rates and volume manufacturing capability. Infineon will show how it´s CoolSiC™ 1200V MOSFET family and matching driver IC offering fulfil the mentioned pillars, all equally important for a working business case for our customers.
13h40 - 14h05
USCi product update Cascode
Speaker: Christopher Rocneanu, USCi
USCi will provide an update on the market outlook for the 650V and 1200V Cascode discrete devices. The key application areas, performance and ease of use aspects will be discussed. We will also provide an update on 6inch based product releases from USCi, as well as new high current diode and stack cascode devices for EV applications.
14h05 - 14h30
Putting active and passive SiC Power devices into action Performance and Robustness
Speaker: Thomas Neyer, ON Semi
The Performance and Robustness will be shown for the devices
14h30 - 14h55
Accelerating Adoption: Practical, Ready-to-Use SiC Devices and Circuit Solutions that Enable Better, More Efficient Power Systems
Speaker: Guy Moxey, Cree, Wolfspeed
Wolfspeed will present and discuss several real-life, system-level examples working for our current customers--today. We’ll share how SiC devices have solved common challenges that designers face when shackled to traditional silicon devices. The practical, real, and ready-to-use circuit solutions discussed will span watts to hundreds of kW. Each solution will highlight our commercially available, fully qualified SiC devices, proven within the market to enable significant value to systems with regards to efficiency, power density, and cost. The market has heard for many years about WBG product roadmaps and concepts, touting what possibilities could be available. However, you can’t design in a PowerPoint presentation or a preliminary datasheet, so this session will reinforce that Wolfspeed SiC power has moved beyond the hype, talk, and fake news. We’ll showcase SiC devices that are widely used today and how they solve real issues.
15h25 - 15h50
Realization and Commercial Insertion of >3300 V SiC MOSFETs
Speaker: Ranbir Singh, GeneSic
Designing high voltage SiC MOSFETs includes iteratively optimizing epilayer and device design, fabrication and on-wafer characterization. High-temperature and switching characterization needs to be conducted. A technical feasibility study on the design of the medium-voltage power module is also necessary to realize low-inductance medium-voltage SiC phase-leg modules SiC Power semiconductor with >3300 V ratings are expected to grow at >69% rate over the next 4 years. Primarily, this market consists of traction drives, grid-tied charging and rail auxiliary drives. The insertion of SiC MOSFETs in rail traction market has already begun.
15h50 - 16h15
Uncover and Overcome the Challenges of High Switching Speeds with SIC
Speaker: Kevin Speer, Littelfuse
With SiC's capability for much higher switching speeds, challenges have been uncovered that went unnoticed with slower silicon IGBTs, including excessive transient voltage spikes, oscillations and EMI, optimization of passives, and adequate measurement methodologies. How can innovations in packaging, layout, passives, and measurement practices unleash the myriad benefits of SiC?
16h15 - 16h40
New concepts of capacitor designs in power electronics
Speaker: Thomas Ebel, FTCAP GmbH
FTCAP has invented and patented a new concept of film capacitor designs called “Fischer Link” as an assembly of film capacitors were the winding is directly mounted (soldered) to the busbar. Saving space by this method leads to a higher power density, to cost saving effects and the big advantage of significantly lower inductances compared to standard screwed capacitor busbar assemblies.
16h40 - 17h05
Intelligent Gate Drivers for SiC MOSFETs – Addressing Safe Operation, Efficiency & EMI
Speaker: Cliff Robins, agileswitch
AgileSwitch will present its Intelligent Gate Driver solutions for SiC Power MOSFETs. Its patented Augmented Switching technique mitigates key problems faced by system design engineers – Safe Operation, Efficiency, EMI. The talk will also provide an in-depth look at options available for engineers looking to design systems capable of operating in harsh, high noise environments.
GaN - Discrete, Passives and Measurement
13h15 - 13h40
High-Voltage (600V) GaN Power Devices: Status and Benefits
Speaker: Thomas Detzel, Infineon
GaN power devices have now become reality in high performance power conversion applications. This talk will provide a performance benchmark for 600V GaN devices, a deeper insight into its industrial implementation and quality control, as well as successful application examples.
13h40 - 14h05
Rdyn in hard-switch and soft-switch applications
Speaker: Pierre Gassot, ON semi
A specific feature of GaN HEMT technologies is the degradation of Rdson during switching, the so called dynamic Rdson (Rdyn). The presentation will briefly review the basic physics behind Rdyn and focus on characterization techniques and results obtained by ON Semiconductor for 650V GaN HEMT devices. More specifically the difference in Rdyn behaviour in hard-switch and soft-switch applications will be demonstrated and discussed.
14h05 - 14h30
Making reliable and high-density GaN solutions a reality
Speaker: Franz Xaver Arbinger, Texas Instruments
Gallium nitride (GaN) once thought of as just a cool new technology, is forever changing the way power engineers are designing for density and efficiency. GaN-based solutions not only make power supplies faster, smaller and cooler, but also meet industry’s demand for ruggedness and system solution cost. This presentation provides an overview of how GaN is making this possible, along with practical examples including power factor correction (PFC), HV isolated DC/DC converter, and lower voltage DC power supplies.
14h30 - 14h55
GaN Brings About a New Way of Thinking
Speaker: Steve Colino, EPC
Wide bandgap semiconductors, such as GaN, provide a new level of speed and size providing designers with system alternatives that were not possible with silicon based semiconductors. The increase in speed allows much higher frequencies and voltages to be switched efficiently. This paper will explore the progress of enhancement mode GaN, and some of the different ways of thinking that are possible.
15h25 - 16h50
Practical Solutions Design with GaN
Speaker: Jim Witham, GaN Systems
Ranging from 20 Watts to 20 kilowatts, GaN Systems will demonstrate that many of the same design techniques used in legacy products can be applied to new designs with only a few minor changes. Emphasis will be placed on topologies, passive component selection, driver selection, and EMI and thermal analysis.
15h50 - 16h15
Practical Design Considerations for a 3.3kW Bridgeless Totem-pole PFC Using GaN FETs
Speaker: Jim Honea, Transphorm
Gallium Nitride (GaN) FETs, with their fast switching and low reverse recovery charge, are the key to practical bridgeless totem-pole power factor correction (PFC) designs. To successfully take advantage of the simplicity and efficiency offered by the topology, however, a number of practical design issues must be considered. In this presentation, a 3.3kW continuous-conduction mode PFC will be used as a basis to study the GaN half bridge configuration itself along with the gate drive and layout, PFC inductor, EMI filter, surge suppression, and algorithm implementation.
16h15 - 16h40
Practical Measurements considerations for GaN and SiC technologies
Speaker: Andrea Vinci, Power Electronics Business Manager EMEA, Tektronix
As Power electronics rapidly evolves, new opportunities for growth emerge and widebandgap devices adoption is becoming prominent. What are the challenges behind these upcoming semiconductor standards? What is best for probing wireless power transfer? Do we have accurate solutions for testing processing and conversion systems enabling the electric mobility revolution? What challenges to we face when circuit parasitic become critical at high switching frequencies?
16h40 - 17h05
Dealing with common-mode voltage influence
Speaker: Bernd Neuner, ZES Zimmer
The extreme du/dt values made possible by GaN transistors create common mode voltages at the switching frequency and above. Without appropriate measures, instrument readings will show huge deviations from the true value. We will present possible approaches to address this challenge and discuss their relative merits.