Conference Programme

We are facing higher switching frequency and higher operating temperatures. Wide Band Gap Semiconductors can accommodate these increasing demands by permitting better performance than today’s silicon. Passive components from heat sinks, capacitors and coils get smaller. The overall benefit is reduced sizes for the total systems in all applications. However, the challenges are having improved measurement equipment available and to analyze the designs correctly.

The Conference Programme will consist of 20-minute technical presentations covering:

  • GaN ICs, SiC Modules
  • Simulation and Measurement

In the afternoon, the Conference will be divided into two parallel Sessions:

  • SiC – Discrete, Passives and Measurement
  • GaN – Discrete, Passives and Measurement

We are expecting to hear speakers from the following companies (tentative list):

  • Siemens
  • ROHM Semiconductor
  • Mitsubishi Electric
  • Infineon Technologies
  • Wolfspeed
  • EPC
  • GaN Systems
  • Navitas
  • Littelfuse
  • GeneSiC
  • Danfoss
  • Plexim
  • USCi
  • ON Semiconductor
  • STMicroelectronics
  • Yokogawa
  • PEM
  • Vincotech
  • EpiGaN
  • Analog Devices
  • And Many More